New encapsulation modules for mm-wave GaAs transit-time devices

A new encapsulation technique for GaAs transit-time devices in modules made of semi-insulating GaAs is reported. The modules, together with the active diode structure, were manufactured from one wafer by photolithographic processes. This technique offers possibilities for further reduction of the parasitics. First experimental results from modules with integrated IMPATT diode structures for V- and W-band frequencies are given.