Title :
Lateral profiling of oxide charge and interface traps near MOSFET junctions
Author :
W. Chen;A. Balasinski;T.-P. Ma
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
Abstract :
A technique for measuring the lateral distributions of both interface traps and trapped oxide charge near the source/drain junctions in MOSFETs is presented in detail. This technique derives from the charge pumping method, is easy to implement, and allows ready separation of the interface-trap and oxide charge components. Some illustrative results are given. The various issues involved in its implementation and its practical limitations are discussed.
Keywords :
"MOSFET circuits","Charge pumps","Current measurement","Charge measurement","Threshold voltage","Pulse measurements","Microelectronics","Senior members","Tail","Data analysis"
Journal_Title :
IEEE Transactions on Electron Devices
