Double-interdigitated power transistors

The results of a comprehensive investigation concerning the implementation of the double-interdigitated (TIL) concept in TO-3-packaged triple-diffused power n-p-n/sup -/-n transistors are reported. The ease of manufacturing is accompanied by a relaxation of the tradeoff between the doping and width of the p-base and the main transistor parameters, which is still a crucial issue in conventionally interdigitated switches. The advantages exhibited by TIL devices when compared with identical conventional interdigitated transistors processed simultaneously are discussed.