Performance characterisation of a microwave transistor

The maximum transducer power gain G/sub Tmax/ of a bilateral microwave transistor-is analytically expressed in terms of only noise figure F, input-VSWR V/sub i/ and the open-circuit parameters mod z mod . The analysis is based on a geometrical approach using the constant noise, input VSWR and gain circles in the source and input impedance planes keeping the solution within the physical bounds. The corresponding source Z/sub s/ and load Z/sub L/ terminations are also obtained analytically. Cross-relations among the possible (F, V/sub i/, G/sub Tmax/) triplets have been utilised in obtaining the performance contours of a microwave transistor at an operating frequency and bias condition. This type of representation of performance promises to be used in data sheets of microwave transistors by manufacturers in forthcoming years.