Title :
CMOS radiation sensor with binary output
Author :
E.G. Moreno;B. Iniguez;M. Roca;J. Segura;S. Sureda
Author_Institution :
Univ. de les Illes Balears, Palma, Spain
Abstract :
A radiation sensor compatible with CMOS technology is presented. It provides a binary output which changes its state when the total radiation dose exceeds a prefixed threshold. This circuit is intended to be used as a built-in sensor in standard circuits, to prevent malfunction due to radiation hazards. After measuring the radiation effects on MOS devices, the sensitivity of different sensor designs has been calculated.
Keywords :
"Threshold voltage","Switches","MOS devices","Inverters","Hazards","Electron traps","Interface states","MOSFET circuits","CMOS technology","Radiation effects"
Journal_Title :
IEEE Transactions on Nuclear Science
