• DocumentCode
    3796111
  • Title

    CMOS radiation sensor with binary output

  • Author

    E.G. Moreno;B. Iniguez;M. Roca;J. Segura;S. Sureda

  • Author_Institution
    Univ. de les Illes Balears, Palma, Spain
  • Volume
    42
  • Issue
    3
  • fYear
    1995
  • Firstpage
    174
  • Lastpage
    178
  • Abstract
    A radiation sensor compatible with CMOS technology is presented. It provides a binary output which changes its state when the total radiation dose exceeds a prefixed threshold. This circuit is intended to be used as a built-in sensor in standard circuits, to prevent malfunction due to radiation hazards. After measuring the radiation effects on MOS devices, the sensitivity of different sensor designs has been calculated.
  • Keywords
    "Threshold voltage","Switches","MOS devices","Inverters","Hazards","Electron traps","Interface states","MOSFET circuits","CMOS technology","Radiation effects"
  • Journal_Title
    IEEE Transactions on Nuclear Science
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.387358
  • Filename
    387358
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3796111