• DocumentCode
    3796138
  • Title

    Submilliampere-threshold InGaAs-GaAs quantum-well ridge-waveguide lasers with lateral confinement provided by impurity-induced disordering

  • Author

    S.Y. Hu;M.G. Peters;D.B. Young;A.C. Gossard;L.A. Coldren

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • Volume
    7
  • Issue
    7
  • fYear
    1995
  • Firstpage
    712
  • Lastpage
    714
  • Abstract
    Significant reduction of threshold currents in InGaAs-GaAs quantum-well ridge-waveguide lasers has been achieved by using silicon-induced disordering to provide lateral confinement. Room-temperature threshold currents as low as 0.7 mA for pulsed operation and 0.9 mA for cw operation have been obtained from an uncoated 137-/spl mu/m-long and 0.3-/spl mu/m-wide device. In addition, the effects of high-temperature annealing on the various device characteristics, such as the gain curve, internal loss, and quantum efficiency, have been investigated.
  • Keywords
    "Quantum well lasers","Vertical cavity surface emitting lasers","Threshold current","Gallium arsenide","Etching","Semiconductor lasers","Optical materials","Potential well","Annealing","Optical control"
  • Journal_Title
    IEEE Photonics Technology Letters
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.393182
  • Filename
    393182
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3796138