Title :
Submilliampere-threshold InGaAs-GaAs quantum-well ridge-waveguide lasers with lateral confinement provided by impurity-induced disordering
Author :
S.Y. Hu;M.G. Peters;D.B. Young;A.C. Gossard;L.A. Coldren
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Significant reduction of threshold currents in InGaAs-GaAs quantum-well ridge-waveguide lasers has been achieved by using silicon-induced disordering to provide lateral confinement. Room-temperature threshold currents as low as 0.7 mA for pulsed operation and 0.9 mA for cw operation have been obtained from an uncoated 137-/spl mu/m-long and 0.3-/spl mu/m-wide device. In addition, the effects of high-temperature annealing on the various device characteristics, such as the gain curve, internal loss, and quantum efficiency, have been investigated.
Keywords :
"Quantum well lasers","Vertical cavity surface emitting lasers","Threshold current","Gallium arsenide","Etching","Semiconductor lasers","Optical materials","Potential well","Annealing","Optical control"
Journal_Title :
IEEE Photonics Technology Letters
