Title :
Characterization of Single-Event Burnout in Power MOSFET Using Backside Laser Testing
Author :
F. Miller;A. Luu;F. Prud´homme;P. Poirot;R. Gaillard;N. Buard;T. Carrire
Author_Institution :
Corporate Res. Center, Eur. Aeronaut. Defence & Space Co., Suresnes
Abstract :
This paper presents a new methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards Single-Event Burnout. It is shown that this technique can be used to define the safe operating area
Keywords :
"MOSFET circuits","Power MOSFET","Power lasers","Voltage","Performance evaluation","Circuit testing","Neutrons","Protons","Power supplies","Capacitors"
Journal_Title :
IEEE Transactions on Nuclear Science
DOI :
10.1109/TNS.2006.885376
