• DocumentCode
    379777
  • Title

    IDDT testing of embedded CMOS SRAMs

  • Author

    Kumar, Suriya Ashok ; Makki, Rafic Zein ; Binkley, David M.

  • Author_Institution
    North Carolina Univ., Charlotte, NC, USA
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    1117
  • Abstract
    This paper presents an iDDT test method for embedded CMOS SRAMs. A total of 192 faults were inserted and simulated using parameters from a 0.35 um process. The SRAM model includes realistic effects such as wire bonding inductance and resistance parameters as well as bypass capacitance. A sensor is introduced and incorporated into the SRAM cell array to detect abnormal iDDT switching
  • Keywords
    CMOS memory circuits; SRAM chips; electric current measurement; fault diagnosis; integrated circuit testing; 0.35 micron; 0.35 um CMOS; IDDT switching fault; bypass capacitance; cell bridging faults; decoder faults; embedded CMOS SRAM; gate oxide shorts; opens; pattern sensitivity faults; resistance; wire bonding inductance; Bonding; Capacitance; Fault detection; Inductance; Random access memory; Semiconductor device modeling; Sensor arrays; Testing; Voltage; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design, Automation and Test in Europe Conference and Exhibition, 2002. Proceedings
  • Conference_Location
    Paris
  • ISSN
    1530-1591
  • Print_ISBN
    0-7695-1471-5
  • Type

    conf

  • DOI
    10.1109/DATE.2002.998473
  • Filename
    998473
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=379777