Title :
High frequency power electronic systems are given by the newest generation of CoolMOS C3 together with SiC-Schottky diode
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
The new CoolMOS C3 generation combines extremely high on-state conductivity with ultra fast switching speed at full pulse current capability. In many applications the outstanding switching performance of the CoolMOS can´t be utilized due to the dynamic behaviour of the diode. For this reason a whole family of SiC-diodes have been developed to get the ideal matched pair of switch and ultra fast diodes. The goal of ultra low loss applications in SMPS, power factor correction circuits and motor control units is achieved completely
Keywords :
power MOSFET; power factor correction; power semiconductor diodes; semiconductor materials; silicon compounds; switched mode power supplies; switching circuits; 500 V; 800 V; CoolMOS C3; SMPS; SiC; SiC-Schottky diode; SiC-diodes; dynamic behaviour; full pulse current capability; high frequency power electronic systems; high on state conductivity; ideal matched pair; low loss applications; motor control units; outstanding switching performance; overcurrent stability; power factor correction circuits; ultra fast diodes; ultra fast switching speed; Circuits; Conductivity; Diodes; Frequency; Motor drives; Power electronics; Power factor correction; Pulse generation; Switched-mode power supply; Switches;
Conference_Titel :
Power Conversion Conference, 2002. PCC-Osaka 2002. Proceedings of the
Conference_Location :
Osaka
Print_ISBN :
0-7803-7156-9
DOI :
10.1109/PCC.2002.998553
