• DocumentCode
    379928
  • Title

    Investigation of a diamond window failure mechanism

  • Author

    Bosman, Herman L. ; Lau, Y.Y. ; Gilgenbach, R.M.

  • Author_Institution
    Dept. of Nucl. Eng. & Radiol. Sci., Michigan Univ., Ann Arbor, MI, USA
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    379
  • Lastpage
    380
  • Abstract
    A theoretical model for the failure of diamond windows in high power gyrotrons is presented. We tentatively conclude that graphitization of the diamond, as a result of the long pulse operation, is unlikely to cause the diamond window failure. It has been found that diamond windows perform adequately for some time before rapid, destructive failure occurs. This would suggest a failure mechanism that is cumulative for each successive microwave pulse, with the individual contributions being small and non-destructive. We therefore speculate that the RF power is absorbed in thin, graphitic regions adjacent to the grain boundaries in the polycrystalline diamond window. For a sufficiently high temperature increase, the diamond adjacent to the grain boundaries will be converted into graphite. This in turn accelerates the RF power absorption, and ultimately leads to mechanical failure of the window. The failure mechanism proposed is based on a chemical transformation at the grain boundaries.
  • Keywords
    diamond; electron tube components; grain boundaries; graphitisation; gyrotrons; thermal stress cracking; C; RF power absorption; chemical transformation; destructive failure; diamond windows; discrete nucleation sites; failure mechanism; grain boundaries; graphitization; high power gyrotrons; high temperature increase; internal microcracks; long pulse operation; model; polycrystalline window; spherical graphite inclusion; Absorption; Acceleration; Chemicals; Diamond-like carbon; Electromagnetic heating; Failure analysis; Grain boundaries; Gyrotrons; Power engineering and energy; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Electronics Conference, 2002. IVEC 2002. Third IEEE International
  • Print_ISBN
    0-7803-7256-5
  • Type

    conf

  • DOI
    10.1109/IVELEC.2002.999432
  • Filename
    999432