DocumentCode :
3799648
Title :
Numerical simulation and comparison of Si BJTs and Si/sub 1-x/Ge/sub x/ HBTs
Author :
B. Pejcinovic;L.E. Kay;T.-W. Tang;D.H. Navon
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
Volume :
36
Issue :
10
fYear :
1989
Firstpage :
2129
Lastpage :
2137
Abstract :
Using the Monte Carlo method for the solution of the Boltzmann transport equation, the authors analyze the low-field carrier mobilities of strained layer and bulk Si and Si/sub 1-x/Ge/sub x/ alloys. Strained alloy layers exhibit higher low-field mobility compared with bulk Si at doping levels >10/sup 18/ cm/sup -3/ and for a Ge mole fraction x
Keywords :
"Numerical simulation","Heterojunction bipolar transistors","Silicon alloys","Poisson equations","Germanium alloys","Current density","Conducting materials","Doping","Voltage","Frequency"
Journal_Title :
IEEE Transactions on Electron Devices
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.40892
Filename :
40892
Link To Document :
