Bipolar Resistive-Switching Phenomena and Resistive-Switching Mechanisms Observed in Zirconium Nitride-Based Resistive-Switching Memory Cells

Author

Hee-Dong Kim ; Ho-Myoung An ; Yun Mo Sung ; Hyunsik Im ; Tae Geun Kim

Author_Institution

Sch. of Electr. Eng., Korea Univ., Seoul, South Korea

Volume

13

Issue

1

fYear

2013

fDate

Mar-13

Firstpage

252

Lastpage

257

Abstract

This paper reports bipolar resistive-switching (RS) characteristics and its mechanism observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent program/erase behavior under +3 V/10 ns and -3 V/10 ns with a high-to-low resistance ratio of > 10⁴. The device also showed an endurance of > 10⁹ cycles and a retention time of > 10⁴ s at 85°C. The temperature-dependent studies of ON/OFF states show that metallic conduction is responsible for ON state, whereas semiconducting or insulating behaviors are clearly observed from OFF-state devices. These results show that ZrN-based RSM can be used as a promising RSM device.

Keywords

bipolar memory circuits; capacitors; zirconium compounds; RSM device; ZrN; bipolar resistive-switching phenomena; capacitors; metallic conduction; resistive-switching mechanisms; resistive-switching memory cells; Annealing; Conductivity; Current measurement; Films; Resistance; Switches; Atomic force microscopy (AFM); SCLC; ZrN; resistive switching (RS);

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2012.2237404

Filename

6403533