• DocumentCode
    3802486
  • Title

    Single-drift flat-profile GaAs impatt diodes at 90 GHz

  • Author

    H. Eisele;J. Freyer

  • Author_Institution
    Technische Universit?t M?nchen, Lehrstuhl f?r Allgemeine Elektrotechnik und Angewandte Elektronik, M?nchen, West Germany
  • Volume
    22
  • Issue
    4
  • fYear
    1986
  • fDate
    2/13/1986 12:00:00 AM
  • Firstpage
    224
  • Lastpage
    225
  • Abstract
    GaAs impatt diodes were fabricated for the 90 GHz range using the single-drift-region structure with flat doping profile. The diodes were fabricated from molecular-beam-epitaxial material and mounted on diamond heat sinks. A highest output power of 240 mW with 4.1% efficiency at 89.6 GHz was achieved.
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860156
  • Filename
    4256344
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3802486