Author_Institution :
Technische Universit?t M?nchen, Lehrstuhl f?r Allgemeine Elektrotechnik und Angewandte Elektronik, M?nchen, West Germany
Abstract :
GaAs impatt diodes were fabricated for the 90 GHz range using the single-drift-region structure with flat doping profile. The diodes were fabricated from molecular-beam-epitaxial material and mounted on diamond heat sinks. A highest output power of 240 mW with 4.1% efficiency at 89.6 GHz was achieved.
