Title :
Controllable Set Voltage in Bilayer ZnO:SiO2/ZnOx Resistance Random Access Memory by Oxygen Concentration Gradient Manipulation
Author :
Xuan Huang ; Kuan-Chang Chang ; Ting-Chang Chang ; Tsung-Ming Tsai ; Chih-Cheng Shih ; Rui Zhang ; Syuan-Yong Huang ; Kai-Huang Chen ; Jung-Hui Chen ; Huei-Jruan Wang ; Wen-Jen Chen ; Fengyan Zhang ; Chao Chen ; Sze, Simon M.
Author_Institution :
Sch. of Energy Res., Xiamen Univ., Xiamen, China
Abstract :
In this letter, we investigated oxygen ion concentration gradient method, which can manipulate the set voltage of zinc oxide-doped silicon oxide resistance random access memory. To analyze this method, the ITO/ZnO:SiO2/ZnOx/TiN bilayer structure was proposed and discussed. On the basis of the oxygen ions migration effect, the set voltage of the oxide-based resistive memory can be altered after a bias stress at the TiN electrode. The physical mechanism of the special resistive switching characteristics were depicted by the interaction between [O2-] gradient driving force and electrical force.
Keywords :
II-VI semiconductors; indium compounds; random-access storage; silicon compounds; tin compounds; wide band gap semiconductors; zinc compounds; ITO-ZnO:SiO2-ZnOx-TiN; bias stress; bilayer structure; controllable set voltage manipulation; electrical force; gradient driving force; oxygen concentration gradient manipulation; oxygen ion concentration gradient method; oxygen ions migration effect; physical mechanism; resistance random access memory; resistive switching characteristics; set voltage mannipulation; zinc oxide-doped silicon oxide resistance random access memory; Indium tin oxide; Nonvolatile memory; Random access memory; Resistance; Voltage control; Zinc oxide; RRAM; concentration gradient; concentration gradient.; set voltage; zinc oxide;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2360525
