مرکز منطقه ای اطلاع رساني علوم و فناوري - Comment on "Short-Term Anneal of 30-MeV Electron Damage in High-Purity n-Type Silicon"

DocumentCode :

3805979

Title :

Comment on "Short-Term Anneal of 30-MeV Electron Damage in High-Purity n-Type Silicon"

Volume :

Issue :

fYear :

1972

Firstpage :

897

Lastpage :

898

Keywords :

"Annealing","Electrons","Silicon","Conductivity","Temperature","Laboratories","Transient analysis","Potential well","Kinetic theory","Steady-state"

Journal_Title :

IEEE Transactions on Nuclear Science

Publisher :

ieee

ISSN :

0018-9499

Type :

jour

DOI :

10.1109/TNS.1972.4326614

Filename :

4326614

Link To Document :