• DocumentCode
    3807484
  • Title

    Dynamics of the Profile Charging During $\hbox{SiO}_{2}$ Etching in Plasma for High Aspect Ratio Trenches

  • Author

    Branislav M. Radjenovic;Marija D. Radmilovic-Radjenovic;Zoran Lj. Petrovic

  • Author_Institution
    Inst. of Phys., Belgrade
  • Volume
    36
  • Issue
    4
  • fYear
    2008
  • Firstpage
    874
  • Lastpage
    875
  • Abstract
    We model charging of the high aspect ratio 3-D trenches during plasma etching of dielectrics. The ion and electron fluxes were computed along the feature using Monte Carlo method. The surface potential profiles and electric field for the entire feature were generated by solving Poisson equation using finite-element method.
  • Keywords
    "Etching","Electrons","Plasma applications","Distribution functions","Surface charging","Poisson equations","Plasma materials processing","Insulation","Plasma devices","Dielectrics"
  • Journal_Title
    IEEE Transactions on Plasma Science
  • Publisher
    ieee
  • ISSN
    0093-3813
  • Type

    jour

  • DOI
    10.1109/TPS.2008.920886
  • Filename
    4493424
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3807484