• DocumentCode
    3809518
  • Title

    Strong room temperature photoluminescence from erbium-doped silicon monoxide

  • Author

    S.W. Roberts;G.J. Parker

  • Author_Institution
    Dept. of Electron. & Comput. Sci., Southampton Univ., UK
  • Volume
    31
  • Issue
    17
  • fYear
    1995
  • Firstpage
    1499
  • Lastpage
    1500
  • Abstract
    Evaporated films of SiO:Er on silicon substrates are shown to exhibit strong photoluminescence after annealing at 600/spl deg/C for 30 min in argon. With an erbium concentration of /spl sim/2.7/spl times/10/sup 20/ cm/sup -3/, the /sup 4/I/sub 13/2/-/sup 4/I/sub 15/2/ transition is found to decay with two exponential components.
  • Keywords
    "Silicon compounds","Erbium","Vapor deposition","Coatings","Annealing","Amorphous semiconductors","Semiconductor films","Photoluminescence"
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950964
  • Filename
    464100
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3809518