DocumentCode
3814923
Title
Applications of Pulsed Discharge to Thin-Film Deposition
Author
Teresa Opalinska;Bogdan Ulejczyk;Krzysztof Schmidt-Szalowski
Author_Institution
Tele & Radio Res. Inst., Warsaw
Volume
37
Issue
6
fYear
2009
Firstpage
934
Lastpage
940
Abstract
Pulsed dielectric-barrier discharge was used to modify polycarbonate surfaces by applying a thin film of silicone oxide. The discharge was supplied by alternating voltage pulses that lasted for about 50 ns. The generated current pulses were shorter and lasted for about 20 ns. For this reason, high power is concentrated in short time. Analysis of the composition thin film by means of the X-ray photoelectron spectroscopy method shows that it consists mainly of silicon, oxygen, and carbon. Based on the concentrations of these elements, films can be divided into three parts. In this paper, the influences of parameters characterizing the plasma reactor are attributed to a charge transferred in the single pulse of discharge, a power of discharge, and a microstructure of discharge. The influences of these parameters on deposition rate are shown.
Keywords
"Sputtering","Dielectric thin films","Semiconductor thin films","Surface discharges","Voltage","Pulse generation","Spectroscopy","Silicon","Chemical elements","Plasma x-ray sources"
Journal_Title
IEEE Transactions on Plasma Science
Publisher
ieee
ISSN
0093-3813
Type
jour
DOI
10.1109/TPS.2009.2019094
Filename
4926197
Link To Document