• DocumentCode
    3814923
  • Title

    Applications of Pulsed Discharge to Thin-Film Deposition

  • Author

    Teresa Opalinska;Bogdan Ulejczyk;Krzysztof Schmidt-Szalowski

  • Author_Institution
    Tele & Radio Res. Inst., Warsaw
  • Volume
    37
  • Issue
    6
  • fYear
    2009
  • Firstpage
    934
  • Lastpage
    940
  • Abstract
    Pulsed dielectric-barrier discharge was used to modify polycarbonate surfaces by applying a thin film of silicone oxide. The discharge was supplied by alternating voltage pulses that lasted for about 50 ns. The generated current pulses were shorter and lasted for about 20 ns. For this reason, high power is concentrated in short time. Analysis of the composition thin film by means of the X-ray photoelectron spectroscopy method shows that it consists mainly of silicon, oxygen, and carbon. Based on the concentrations of these elements, films can be divided into three parts. In this paper, the influences of parameters characterizing the plasma reactor are attributed to a charge transferred in the single pulse of discharge, a power of discharge, and a microstructure of discharge. The influences of these parameters on deposition rate are shown.
  • Keywords
    "Sputtering","Dielectric thin films","Semiconductor thin films","Surface discharges","Voltage","Pulse generation","Spectroscopy","Silicon","Chemical elements","Plasma x-ray sources"
  • Journal_Title
    IEEE Transactions on Plasma Science
  • Publisher
    ieee
  • ISSN
    0093-3813
  • Type

    jour

  • DOI
    10.1109/TPS.2009.2019094
  • Filename
    4926197