A novel silicon MIS photodetector using molecular semiconductor as intermediate oxide layer

Author

Malik, Alexander ; Sosa, Jose Luis ; Alcántara, Salvador

Author_Institution

Electron. Dept., INAOE, Puebla, Mexico

Volume

1

fYear

2002

fDate

2002

Firstpage

102

Abstract

In this paper, we describe new photoelectric properties of metal-molecular semiconductor-semiconductor sensors that have been fabricated by deposition of metal-phthalocyanine (MePc) films on a silicon substrate. In these sensors the MePc film serves as a leaky intermediate oxide. The photoelectric properties of sensors have been investigated under DC and a trapezoidal voltage bias applied to the sensor. The photocurrent multiplication properties of M-MePc-semiconductor optical sensors obtained at different voltage bias modes are discussed.

Keywords

MIS devices; elemental semiconductors; organic semiconductors; photoconductivity; photodetectors; silicon; Al; DC voltage bias; Si; Si MIS photodetector; Si substrate; Ti; intermediate oxide layer; leaky oxide; metal-molecular semiconductor-semiconductor sensors; metal-phthalocyanine films; molecular semiconductor; optical sensors; photocurrent multiplication; photoelectric properties; trapezoidal voltage bias; Conductivity; Electrodes; Optical films; Optical sensors; Photoconductivity; Photodetectors; Semiconductor films; Silicon; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2002. Proceedings of IEEE

Print_ISBN

0-7803-7454-1

Type

conf

DOI

10.1109/ICSENS.2002.1036997

Filename

1036997