Title :
A novel silicon MIS photodetector using molecular semiconductor as intermediate oxide layer
Author :
Malik, Alexander ; Sosa, Jose Luis ; Alcántara, Salvador
Author_Institution :
Electron. Dept., INAOE, Puebla, Mexico
Abstract :
In this paper, we describe new photoelectric properties of metal-molecular semiconductor-semiconductor sensors that have been fabricated by deposition of metal-phthalocyanine (MePc) films on a silicon substrate. In these sensors the MePc film serves as a leaky intermediate oxide. The photoelectric properties of sensors have been investigated under DC and a trapezoidal voltage bias applied to the sensor. The photocurrent multiplication properties of M-MePc-semiconductor optical sensors obtained at different voltage bias modes are discussed.
Keywords :
MIS devices; elemental semiconductors; organic semiconductors; photoconductivity; photodetectors; silicon; Al; DC voltage bias; Si; Si MIS photodetector; Si substrate; Ti; intermediate oxide layer; leaky oxide; metal-molecular semiconductor-semiconductor sensors; metal-phthalocyanine films; molecular semiconductor; optical sensors; photocurrent multiplication; photoelectric properties; trapezoidal voltage bias; Conductivity; Electrodes; Optical films; Optical sensors; Photoconductivity; Photodetectors; Semiconductor films; Silicon; Substrates; Voltage;
Conference_Titel :
Sensors, 2002. Proceedings of IEEE
Print_ISBN :
0-7803-7454-1
DOI :
10.1109/ICSENS.2002.1036997
