Examination of thin porous mono- and multilayer structures containing an underlayer of porous silicon

Author

Leonov, Llya A. ; Pchelyakov, Oleg P. ; Mogilnikov, K.P.

Author_Institution

Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, Russia

Volume

1

fYear

2002

fDate

2002

Firstpage

572

Abstract

The paper is devoted to examination of porous silicon properties and structures obtained by molecular beam epitaxy (MBE) methods by methods of ellipsometric porosity measurement. These methods allow one to gain general porosity allocation of pores on the sizes, and also to explore adsorption and optical properties of a material. Also application of an ellipsometric porosity measuring method is described to encapsulating epifilm quality control.

Keywords

adsorption; electric sensing devices; elemental semiconductors; ellipsometry; encapsulation; molecular beam epitaxial growth; porosity; porous semiconductors; quality control; semiconductor epitaxial layers; semiconductor growth; silicon; Si; adsorption; ellipsometric porosity measurement; encapsulating epifilm; molecular beam epitaxy; multilayer structures; porous semiconductors; quality control; Etching; Molecular beam epitaxial growth; Nonhomogeneous media; Optical buffering; Optical films; Optical materials; Physics; Sensor phenomena and characterization; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2002. Proceedings of IEEE

Print_ISBN

0-7803-7454-1

Type

conf

DOI

10.1109/ICSENS.2002.1037162

Filename

1037162