Single crystal silicon MEMS fabrication technology using proton-implantation smart-cut technique

A novel single crystal silicon MEMS fabrication process is proposed using proton-implantation smart-cut technique. Compared to conventional SOI wafer fabrication processes for MEMS applications, this technology can potentially result in a significant substrate and processing cost reduction. A single crystal silicon layer with 1.78 μm thickness has been achieved using the proposed technique. Prototype structures such as cantilever beams and clamped-clamped micro-bridges have been successfully fabricated as demonstration vehicles for future micro-system implementations.