Enhancement of the low temperature response of thin film gas sensors by UV irradiation

Author

Comini, E. ; Ottini, L. ; Faglia, G. ; Sberveglieri, G.

Author_Institution

Brescia Univ., Italy

Volume

1

fYear

2002

fDate

2002

Firstpage

613

Abstract

In this work we present recent results regarding the activation of sensors with high power density light with energy in the range of the energy gap of the semiconductor. We report the measurements registered for tin oxide RGTO deposited layers using CO as a target gas. The influence of the doping on the activated gas sensing properties has been investigated. We have found the value of the incident power corresponding to the best gas sensing performances (response enhancement and kinetics). The comparison between dark and irradiation condition is presented for the different kinds of layers tested.

Keywords

air pollution measurement; gas sensors; semiconductor materials; semiconductor thin films; tin compounds; CO; RGTO; SnO₂; UV irradiation; activated gas sensing properties; incident power; irradiation condition; low temperature response; response enhancement; rheotaxial growth and thermal oxidation; thin film gas sensors; Crystalline materials; Gas detectors; Grain boundaries; Kinetic theory; Lattices; Optical sensors; Pollution; Temperature sensors; Thin film sensors; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2002. Proceedings of IEEE

Print_ISBN

0-7803-7454-1

Type

conf

DOI

10.1109/ICSENS.2002.1037171

Filename

1037171