Title :
Packaging considerations for very high temperature microsystems
Author_Institution :
Sienna Technol. Inc., Woodinville, WA, USA
Abstract :
The keys to successful high-temperature microsystems are the availability of stable high-temperature electronic components (integrated circuits, resistors, capacitors, etc.) and the packaging of these components using the proper materials. The development of silicon carbide integrated circuit (SiC IC) devices for use at temperatures up to 600°C is well underway for these applications. Even though ceramic packages are available for room-temperature electronics, none of them is suitable to package SiC ICs for use over 300°C. Therefore, without parallel developments in packaging technology, the advances in SiC ICs will not matter much. Package selection and development are critical factors in meeting several key requirements: thermal and electrical performance, cost, and form factor. This paper discusses the high-temperature package design and associated materials issues for SiC based microsystems for use up to 600°C.
Keywords :
ceramic packaging; high-temperature electronics; integrated circuit packaging; microassembling; micromechanical devices; microsensors; pressure sensors; silicon compounds; substrates; thermal conductivity; thermal management (packaging); wide band gap semiconductors; 300 to 600 C; AlN; AlN substrates; MEMS-DDA packaging methodology; SiC; SiC based microsystems; SiC pressure sensor package design; die attach material; direct die attach technique; high-temperature materials issues; high-temperature microsystems; high-temperature package design; interconnect materials; stable high-temperature electronic components; Application specific integrated circuits; Capacitors; Ceramics; Electronic components; Electronic packaging thermal management; Electronics packaging; Integrated circuit packaging; Resistors; Silicon carbide; Temperature;
Conference_Titel :
Sensors, 2002. Proceedings of IEEE
Print_ISBN :
0-7803-7454-1
DOI :
10.1109/ICSENS.2002.1037274
