Terahertz intersubband emission from silicon-germanium quantum cascades

Author

Kelsall, Robert W. ; Ikonic, Zoran ; Harrison, Paul ; Lynch, Stephen A. ; Bates, Robert ; Paul, Douglas J. ; Norris, David J. ; Liew, San Lin ; Cullis, Anthony G. ; Robbins, David J. ; Murzyn, Pawel ; Pidgeon, Carl R. ; Arnone, Donald D.

Author_Institution

Inst. of Microwaves & Photonics, Leeds Univ., UK

fYear

2002

fDate

2002

Firstpage

9

Lastpage

12

Abstract

Terahertz electroluminescence due to light hole-heavy hole intersubband transitions in p-type Si/SiGe quantum cascade structures has been observed in both surface-normal and edge emission geometries. THz output powers of up to 50 nW have been observed for surface emission from 100 period Si_0.76Ge_0.24/Si heterostructures grown on a Si_0.8Ge_0.2 relaxed buffer or ´virtual substrate´.

Keywords

Ge-Si alloys; electroluminescence; elemental semiconductors; quantum cascade lasers; semiconductor materials; silicon; submillimetre wave lasers; 50 nW; Si_0.76Ge_0.24-Si; Si_0.8Ge_0.2; THz electroluminescence; THz output powers; edge emission geometry; heterostructures; light hole-heavy hole intersubband transitions; p-type Si/SiGe quantum cascade structures; relaxed buffer; surface-normal geometry; terahertz intersubband emission; virtual substrate; Frequency; Germanium silicon alloys; Light scattering; Particle scattering; Phonons; Quantum cascade lasers; Silicon germanium; Substrates; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Terahertz Electronics Proceedings, 2002. IEEE Tenth International Conference on

Print_ISBN

0-7803-7630-7

Type

conf

DOI

10.1109/THZ.2002.1037575

Filename

1037575