DocumentCode :
381840
Title :
Terahertz intersubband emission from silicon-germanium quantum cascades
Author :
Kelsall, Robert W. ; Ikonic, Zoran ; Harrison, Paul ; Lynch, Stephen A. ; Bates, Robert ; Paul, Douglas J. ; Norris, David J. ; Liew, San Lin ; Cullis, Anthony G. ; Robbins, David J. ; Murzyn, Pawel ; Pidgeon, Carl R. ; Arnone, Donald D.
Author_Institution :
Inst. of Microwaves & Photonics, Leeds Univ., UK
fYear :
2002
fDate :
2002
Firstpage :
9
Lastpage :
12
Abstract :
Terahertz electroluminescence due to light hole-heavy hole intersubband transitions in p-type Si/SiGe quantum cascade structures has been observed in both surface-normal and edge emission geometries. THz output powers of up to 50 nW have been observed for surface emission from 100 period Si0.76Ge0.24/Si heterostructures grown on a Si0.8Ge0.2 relaxed buffer or ´virtual substrate´.
Keywords :
Ge-Si alloys; electroluminescence; elemental semiconductors; quantum cascade lasers; semiconductor materials; silicon; submillimetre wave lasers; 50 nW; Si0.76Ge0.24-Si; Si0.8Ge0.2; THz electroluminescence; THz output powers; edge emission geometry; heterostructures; light hole-heavy hole intersubband transitions; p-type Si/SiGe quantum cascade structures; relaxed buffer; surface-normal geometry; terahertz intersubband emission; virtual substrate; Frequency; Germanium silicon alloys; Light scattering; Particle scattering; Phonons; Quantum cascade lasers; Silicon germanium; Substrates; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Terahertz Electronics Proceedings, 2002. IEEE Tenth International Conference on
Print_ISBN :
0-7803-7630-7
Type :
conf
DOI :
10.1109/THZ.2002.1037575
Filename :
1037575
Link To Document :
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