Diagonal and vertical far-infrared transitions from quantum cascade emitters

Author

Dhillon, S.S. ; Davies, A.G. ; Arnone, D.D. ; Beere, H.E. ; Ritchie, D.A. ; Linfield, E.H.

Author_Institution

Cambridge Univ., UK

fYear

2002

fDate

2002

Firstpage

101

Lastpage

104

Abstract

We report a study of a far-infrared GaAs-Al_0.15Ga_0.85As quantum cascade electro-luminescence device designed to emit via both diagonal and vertical transitions. Each type of transition was preferentially chosen by varying the applied electric field. The different transitions were identified by correlation with bandstructure calculations, electrical characteristics and the width of the peaks. Further, the importance of contact resistance on the spectra was shown.

Keywords

III-V semiconductors; aluminium compounds; band structure; contact resistance; electroluminescent devices; gallium arsenide; infrared sources; quantum well devices; semiconductor device measurement; submillimetre wave devices; submillimetre wave generation; GaAs-AlGaAs; GaAs/AlGaAs quantum cascade emitters; applied electric field variation; bandstructure calculations; diagonal/vertical far-infrared transitions; electric field transition type choice; electrical characteristics; electroluminescence; quantum cascade electro-luminescence devices; quantum well devices; spectra contact resistance effects; spectra peak widths; transition identification; Contact resistance; Electric variables; Electroluminescent devices; Helium; Optical scattering; Particle scattering; Phonons; Quantum cascade lasers; Stimulated emission; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Terahertz Electronics Proceedings, 2002. IEEE Tenth International Conference on

Print_ISBN

0-7803-7630-7

Type

conf

DOI

10.1109/THZ.2002.1037601

Filename

1037601