DocumentCode :
3818453
Title :
Erratum for Over 1500 V/2 A operation of GaN RESURF-MOSFETs on sapphire substrate
Author :
Y. Niiyama;H. Kambayashi;S. Ootomo;T. Nomura;S. Kato;T.P. Chow
Volume :
45
Issue :
14
fYear :
2009
fDate :
7/2/2009 12:00:00 AM
Firstpage :
764
Lastpage :
764
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2009.1739
Filename :
5159734
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3818453
