DocumentCode
3818453
Title
Erratum for Over 1500 V/2 A operation of GaN RESURF-MOSFETs on sapphire substrate
Author
Y. Niiyama;H. Kambayashi;S. Ootomo;T. Nomura;S. Kato;T.P. Chow
Volume
45
Issue
14
fYear
2009
fDate
7/2/2009 12:00:00 AM
Firstpage
764
Lastpage
764
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2009.1739
Filename
5159734
Link To Document