DocumentCode
381846
Title
Limitations in THz power generation with Schottky diode varactor frequency multipliers
Author
Krozer, Viktor ; Loata, Gabriel ; De La Fuente, Jesús Grajal ; Sanz, Pablo
Author_Institution
Orsted.DTU-EMI, Lyngby, Denmark
fYear
2002
fDate
2002
Firstpage
109
Lastpage
112
Abstract
We discuss the limitations in power generation with Schottky diode and HBV (heterostructure barrier varactor) diode frequency multipliers. It is shown that at lower frequencies the experimental results achieved so far approach the theoretical limit of operation for the employed devices. However, at increasing frequencies the power drops with f-3 instead of the f-2 predicted by theory. In this contribution we provide an overview of state-of-the-art results. A comparison with theoretically achievable multiplier performance reveals that the devices employed at higher frequencies are operating inefficiently and the design and fabrication capabilities have not reached the maturity encountered at lower THz frequencies.
Keywords
Schottky diodes; circuit simulation; frequency multipliers; semiconductor device models; submillimetre wave circuits; submillimetre wave diodes; varactors; HBV diodes; Schottky diode varactor frequency multipliers; THz power generation limitations; converters; device design/fabrication capabilities; device theoretical operation limit; frequency conversion; heterostructure barrier varactors; increased frequency power drop; inefficient high frequency operation; submillimeter wave circuits; submillimeter wave devices; theoretically achievable multiplier performance; Circuit optimization; Circuit simulation; Design optimization; Doping; Fabrication; Frequency; Power generation; Schottky diodes; Submillimeter wave devices; Varactors;
fLanguage
English
Publisher
ieee
Conference_Titel
Terahertz Electronics Proceedings, 2002. IEEE Tenth International Conference on
Print_ISBN
0-7803-7630-7
Type
conf
DOI
10.1109/THZ.2002.1037603
Filename
1037603
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