• DocumentCode
    38286
  • Title

    SRAM Array Structures for Energy Efficiency Enhancement

  • Author

    Garg, Adesh ; Kim, Tony Tae-Hyoung

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
  • Volume
    60
  • Issue
    6
  • fYear
    2013
  • fDate
    Jun-13
  • Firstpage
    351
  • Lastpage
    355
  • Abstract
    Energy efficiency is a supreme design concern in many ultralow-power applications. In such applications, static random-access memory (SRAM) plays a significant role in energy consumption due to the high density for evermore increased computing power. This brief explores and analyzes SRAM array structures for energy efficiency improvement. In contrast to the traditional practices where SRAM arrays enclose more rows than columns, this work reveals that better SRAM energy efficiencies can be achieved with a wider SRAM array structure with fewer rows than columns particularly at low supply voltage. The analysis shows that the array structure optimization can improve the energy efficiency up to 38% (64 kbit) and 10% (8 kbit) for the same SRAM bit density and the same supply voltage.
  • Keywords
    SRAM chips; low-power electronics; SRAM array structures; SRAM bit density; array structure optimization; energy efficiency enhancement; static random-access memory array structures; ultralow-power applications; Eight-transistor (8T) static random-access memory (SRAM); SRAM; energy efficiency; minimum energy;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems II: Express Briefs, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-7747
  • Type

    jour

  • DOI
    10.1109/TCSII.2013.2258247
  • Filename
    6509403