DocumentCode
382942
Title
Improvement of degradation detection in ESD test for semiconductor products
Author
Satoh, Shingo
Author_Institution
ITES Co. Ltd, Japan
Volume
2
fYear
2002
fDate
13-18 Oct. 2002
Firstpage
1047
Abstract
ESD test is one of the key items in evaluation tests for semiconductor products, and human body model (HBM) ESD test is the most popular and standardized test among three typical ESD models. In HBM ESD test, some issues are experienced in the detection of device degradation as Pass/Fail judgment after ESD stress applied. Some kind of device degradation cannot be detected with the conventional test condition and criteria. Against these issues, improved judgment test using effective combination of optimized DC leak test and device functional test was proposed and performed. It is confirmed that this method would realize more efficient and accurate judgment in ESD test.
Keywords
electrostatic discharge; failure analysis; semiconductor device testing; ESD test; degradation detection improvement; device functional test; human body model; improved judgment test; optimized DC leak test; pass/fail judgment; semiconductor products; Automatic testing; Biological system modeling; Circuit simulation; Circuit testing; Degradation; Electrostatic discharge; Pins; Semiconductor device testing; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 2002. 37th IAS Annual Meeting. Conference Record of the
Conference_Location
Pittsburgh, PA, USA
ISSN
0197-2618
Print_ISBN
0-7803-7420-7
Type
conf
DOI
10.1109/IAS.2002.1042687
Filename
1042687
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