New MEGA POWER DUAL/spl trade/ IGBT module with advanced 1200 V CSTBT chip

Author

Yamada, Junji ; Yu, Yoshiharu ; Donlon, John F. ; Motto, Eric R.

Author_Institution

Power Device Div., Mitsubishi Electr. Corp., Fukuoka, Japan

Volume

3

fYear

2002

fDate

13-18 Oct. 2002

Firstpage

2159

Abstract

A new 1400 A/1200 V MEGA POWER DUAL/spl trade/ IGBT module has been developed for high power industrial applications. The new module incorporates the latest advances in chip technology to produce a device with the rugged safe operating area and low losses required in high power industrial applications. The new power chip is based on an optimized wide cell pitch carrier stored trench bipolar transistor (CSTBT). The module features an optimized high current dual (half bridge) package with low parasitic inductance and integrated features designed to allow simplified assembly of high power inverters.

Keywords

bridge circuits; insulated gate bipolar transistors; isolation technology; modules; 1200 V; 1400 A; MEGA POWER DUAL IGBT module; carrier stored trench bipolar transistor chip; chip technology; half bridge package; high power industrial applications; high power inverters; integrated features; low losses; low parasitic inductance; optimized high current dual package; rugged safe operating area; wide cell pitch CSTBT; Assembly; Bipolar transistors; Bridge circuits; Design optimization; Inductance; Insulated gate bipolar transistors; Inverters; MOSFET circuits; Packaging; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2002. 37th IAS Annual Meeting. Conference Record of the

Conference_Location

Pittsburgh, PA, USA

ISSN

0197-2618

Print_ISBN

0-7803-7420-7

Type

conf

DOI

10.1109/IAS.2002.1043830

Filename

1043830