GaN power switching device growth by plasma assisted molecular beam epitaxy

Author

Park, C. ; Chapman, P.L. ; Rhee, S.H. ; Hong, S.J. ; Zhang, X. ; Krein, P.T. ; Kim, K.

Author_Institution

Illinois Univ., Urbana, IL, USA

Volume

1

fYear

2002

fDate

13-18 Oct. 2002

Firstpage

576

Abstract

Newly fabricated junction field effect transistors (JFETs) and high electron mobility transistors (HEMTs) based on gallium nitride (GaN) substrates are presented. The devices, grown with plasma assisted molecular beam epitaxy (PAMBE), are to be used for power switching applications. Very high quality p- and n-type films were grown. Some test results are shown for surface smoothness and for successfully processed Schottky diodes.

Keywords

III-V semiconductors; Schottky diodes; field effect transistor switches; gallium compounds; high electron mobility transistors; junction gate field effect transistors; molecular beam epitaxial growth; plasma materials processing; power semiconductor switches; semiconductor growth; substrates; GaN; GaN power switching device growth; HEMT; JFET; Schottky diodes; gallium nitride substrates; high electron mobility transistors; junction field effect transistors; n-type films; p-type films; plasma assisted molecular beam epitaxy; surface smoothness; FETs; Gallium nitride; HEMTs; III-V semiconductor materials; JFETs; MODFETs; Molecular beam epitaxial growth; Plasma applications; Plasma devices; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2002. 37th IAS Annual Meeting. Conference Record of the

Conference_Location

Pittsburgh, PA, USA

ISSN

0197-2618

Print_ISBN

0-7803-7420-7

Type

conf

DOI

10.1109/IAS.2002.1044143

Filename

1044143