Title :
Measurement and simulation of electrical and thermal property of drain and source on insulator MOSFETs (DSOI)
Author :
He, Ping ; Lin, Xi ; Jiang, Bo ; Liu, Litian ; Tian, Lilin ; Li, Zhijian ; Dong, Yemin ; Chen, Meng ; Wang, Xi
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
In this work, the DSOI structure is realized and integrated with SOI and bulk devices on the same die using local SIMOX technology. The electrical and thermal properties are carefully measured. The substrate thermal resistances are measured and compared. 2D simulation with Ansys is also done for deep insight into the heat transport process of DSOI devices.
Keywords :
MOSFET; SIMOX; elemental semiconductors; semiconductor device measurement; semiconductor device models; silicon; silicon-on-insulator; thermal conductivity; 2D simulation; Ansys; DSOI structure; SOI; Si-SiO2; drain and source on insulator MOSFETs; electrical property; heat transport; local SIMOX technology; simulation; substrate thermal resistance; thermal property; MOSFETs; SIMOX; Semiconductor device modeling; Silicon; Silicon on insulator technology; Thermoresistivity;
Conference_Titel :
SOI Conference, IEEE International 2002
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.2002.1044414
