Effects of gate-to-body tunneling current on pass-transistor based PD/SOI CMOS circuits

The gate-to-body tunneling current (I_gb) in PD/SOI devices resulting from the electron tunneling from the valence band has been shown to charge/discharge the floating-body, thus changing the body voltage and V_T and affecting circuit operations. The authors present a detailed study on the effect of gate-to-body tunneling current on pass-transistor-based PD/SOI CMOS circuits in a 1.2 V, 0.13 μm PD/SOI technology with L_poly= 0.075 μm, physical t_OX = 1.5 nm, t_Si = 120 nm, and t_BOX = 145 nm.