• DocumentCode
    383337
  • Title

    Ultra-thin body fully-depleted SOI devices with metal gate (TaSiN) gate, high K (HfO2) dielectric and elevated source/drain extensions

  • Author

    Vandooren, A. ; Egley, S. ; Zavala, M. ; Franke, A. ; Barr, A. ; White, T. ; Samavedam, S. ; Mathew, L. ; Schaeffer, J. ; Pham, D. ; Conner, J. ; Dakshina-Murthy, S. ; Nguyen, B.-Y. ; White, B. ; Orlowski, M. ; Mogab, J.

  • Author_Institution
    Digital DNA Labs., Austin, TX, USA
  • fYear
    2002
  • fDate
    7-10 Oct 2002
  • Firstpage
    205
  • Lastpage
    206
  • Abstract
    We report for the first time physical and electrical characterization of ultra-thin (<100-150A) Fully-Depleted Silicon-On-Insulator (SOI) n and pMOSFETs using TaSiN gate and HfO2 dielectric with elevated Source/Drain extensions.
  • Keywords
    MOSFET; hafnium compounds; silicon compounds; silicon-on-insulator; tantalum compounds; 100 to 150 A; TaSiN-HfO2; elevated source/drain extensions; high K dielectric; metal gate; pMOSFET; ultra-thin body fully-depleted SOI devices; Hafnium compounds; MOSFETs; Silicon compounds; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, IEEE International 2002
  • Print_ISBN
    0-7803-7439-8
  • Type

    conf

  • DOI
    10.1109/SOI.2002.1044477
  • Filename
    1044477
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=383337