Electrical Detection of the Spin Hall Effects in InAs Quantum Well Structure with Perpendicular Magnetization of [Pd/CoFe] Multilayer

Author

Tae Young Lee ; Hyun Cheol Koo ; Hyung-Jun Kim ; Suk Hee Han ; Joonyeon Chang

Author_Institution

Spin Convergence Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea

Volume

50

Issue

1

fYear

2014

fDate

Jan. 2014

Firstpage

1

Lastpage

4

Abstract

The spin Hall effect was electrically detected in an InAs quantum well structure. The spin Hall device consists of an InAs Hall bar and a Pd/CoFe multilayer electrode which has magnetization perpendicular to the sample plane. Spin polarized electrons injected from the Pd/CoFe electrode have spin orientation perpendicular to the quantum well and cause a charge accumulation at the edge of the InAs channel. In the absence of an external magnetic field, a large spin Hall resistance, 9.3 mΩ, is observed and the spin Hall angle is found to be ~ 0.01. The dominant mechanism is believed to side-jump scattering.

Keywords

III-V semiconductors; cobalt alloys; electrodes; indium compounds; iron alloys; magnetic multilayers; magnetisation; palladium; semiconductor quantum wells; spin Hall effect; spin polarised transport; InAs Hall bar; Pd-CoFe; charge accumulation; electrical detection; external magnetic fields; multilayer electrodes; perpendicular magnetization; perpendicular spin orientation; quantum well structure; side-jump scattering; spin Hall angle; spin Hall device; spin Hall resistance; spin polarized electron injection; Conductivity; Electrical resistance measurement; Electrodes; Frequency modulation; Hall effect; Resistance; Semiconductor device measurement; Spin Hall effect (SHE); quantum well (QW); spin polarized transport; spintronics;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2013.2278175

Filename

6692944