A SiGe 4-Gsps 2-bits digitizer with 2-4 GHz input bandwidth

Author

Deschans, David ; Begueret, Jean-Baptiste ; Deval, Yann ; Scarabello, Christophe ; Fouillat, Pascal ; Montignac, Guy ; Baudry, Alain

Author_Institution

IXL Lab., Univ. of Bordeaux, Talence, France

Volume

1

fYear

2002

fDate

2002

Firstpage

1

Abstract

This paper presents a monolithic digitizer, implemented in a BiCMOS 0.35 μm SiGe process, with 4 Gsps sample rate, 3 quantization levels and an input bandwidth from 2 GHz up to 4 GHz under a full Nyquist condition. The adopted digitizer architecture is that of a conventional flash analog to digital converter structure. The overall chip dissipates 652 mW under 2.5 V supply and the die area is 5.4 mm². This digitizer is developed for radioastronomy applications and especially for the ALMA (Atacama Large Millimeter Array) project.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; analogue-digital conversion; high-speed integrated circuits; radiotelescopes; semiconductor materials; 0.35 micron; 2 to 4 GHz; 2.5 V; 652 mW; ALMA project; Atacama Large Millimeter Array; SiGe; SiGe BiCMOS process; flash ADC architecture; flash analog to digital converter structure; monolithic digitizer; radio astronomy applications; Analog-digital conversion; Bandwidth; BiCMOS integrated circuits; CMOS technology; Clocks; Frequency; Germanium silicon alloys; Radio astronomy; Radio interferometry; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2002. 9th International Conference on

Print_ISBN

0-7803-7596-3

Type

conf

DOI

10.1109/ICECS.2002.1045318

Filename

1045318