Silicon bipolar LNAs in the X and Ku bands

Author

Girlando, Giovanni ; Ferla, Giuseppe ; Ragonese, Egidio ; Palmisano, Giuseppe

Author_Institution

STMicroelectronics, Catania, Italy

Volume

1

fYear

2002

fDate

2002

Firstpage

113

Abstract

Two fully integrated silicon bipolar LNAs at 8 and 12 GHz are presented. Both circuits provide simultaneous noise and input impedance matching. Resonant loads, designed for 50-Ω output matching, are also included. From an on-wafer test, the 8 and the 12-GHz LNAs exhibit a power gain of 11.5 and 8 dB and a noise figure of 2.6 and 4.7 dB, respectively. This performance was achieved with bias currents as low as 4 mA for each circuit. The two LNAs were fabricated in a 45-GHz pure bipolar technology. The paper explores the noise and input impedance self-matching trend of cascode topology in the X and Ku bands.

Keywords

MMIC amplifiers; bipolar MMIC; elemental semiconductors; impedance matching; integrated circuit design; integrated circuit noise; silicon; 11.5 dB; 12 GHz; 2.6 dB; 4.7 dB; 45 GHz; 8 GHz; 8 dB; Ku band; SHF; X band; cascode topology; input impedance matching; integrated bipolar LNAs; low-noise amplifier; noise matching; pure bipolar technology; simultaneous matching; Band pass filters; Circuits; HEMTs; Impedance matching; Noise figure; Radio frequency; Satellite broadcasting; Signal to noise ratio; Silicon; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2002. 9th International Conference on

Print_ISBN

0-7803-7596-3

Type

conf

DOI

10.1109/ICECS.2002.1045346

Filename

1045346