Title :
Native Graphene Oxides at Graphene Edges
Author :
Shimamoto, Shigeru ; Naitou, Y. ; Fukuyama, Yasuhiro ; Kiryu, Syogo ; Kaneko, Naoya
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Nat. Metrol. Inst. of Japan, Tsukuba, Japan
Abstract :
Electronic properties of graphene edges on a SiO2 substrate have been examined using scanning probe microscopy. Distinctive dot-like protrusions appearing nearly periodically on the edges of graphene were observed, and the density of the protrusions increased as the number of graphene layers increased. Imaging analysis revealed that the electrostatic properties of these protrusions are different from those of surrounding graphene. These findings are discussed and interpreted in terms of the local oxidation at the native graphene edges.
Keywords :
annealing; electrostatics; graphene; scanning probe microscopy; silicon compounds; C; SiO2; dot-like protrusions; electronic properties; electrostatic properties; graphene edge; graphene layer; native graphene oxides; scanning probe microscopy; Force; Graphene; Image edge detection; Microscopy; Oxidation; Probes; Surfaces; Graphene nanoribbon (GNR); graphene; quantized Hall resistance (QHR) standard; quantum Hall effect; scanning capacitance microscopy (SCM); scanning probe microscopy (SPM);
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
DOI :
10.1109/TIM.2013.2238454