Title :
Experimental threshold logic implementations based on resonant tunnelling diodes
Author :
Prost, W. ; Kim, S.O. ; Glösekötter, P. ; Pacha, C. ; van Husen, H. ; Reimann, T. ; Goser, K.F. ; Tegude, F.J.
Author_Institution :
Solid-State Electron. Dept., Gerhard Mercator Univ., Duisburg, Germany
Abstract :
The design and fabrication of linear threshold gates is presented based on a monostable-bistable transition logic element. Each of its input terminals consist of a resonant tunnelling diode merged with a transistor device experimentally realized in the InP materials system. Both, the heterostructure field effect transistor and the heterobipolar transistor approach are discussed in terms of level-compatibility, the facility of positive and negative weights, and robustness. The design and technology of a 1 bit full adder circuit capable of very low voltage operation (<0.7 V) is shown. The compatibility to Boolean gates is demonstrated, exhibiting, for a NOR gate, a speed of more than 2.5 Gbit/s using a 1 μm technology.
Keywords :
adders; circuit simulation; field effect transistors; heterojunction bipolar transistors; integrated circuit design; integrated circuit modelling; logic design; logic gates; logic simulation; low-power electronics; resonant tunnelling diodes; threshold logic; 0.7 V; 1 bit; 1 micron; 2.5 Gbit/s; Boolean gates; HBT; HFET; InP; MOBILE; MOBILE RTD-based threshold logic implementation; NOR gate speed; RTD; full adder circuits; heterobipolar transistors; heterostructure field effect transistors; level-compatibility; linear threshold gates; monostable-bistable transition logic elements; positive/negative weights; robustness; transistor merged resonant tunnelling diodes; very low voltage operation; Adders; Diodes; Fabrication; HEMTs; Indium phosphide; Logic design; Logic devices; MODFETs; Resonant tunneling devices; Robustness;
Conference_Titel :
Electronics, Circuits and Systems, 2002. 9th International Conference on
Print_ISBN :
0-7803-7596-3
DOI :
10.1109/ICECS.2002.1046257
