A very accurate design of monolithic inductors in a 2D EM simulator

This work discusses a strategy for the design of monolithic inductors through 2D EM simulations. Two different types of inductors are considered which were fabricated in a high frequency bipolar silicon process. The first type is an inductor on a traditional substrate with a solid n⁺-doped buried layer, the second type is an inductor on a substrate with an oxide honeycomb trenched buried layer. The proposed strategy takes into account substrate effects, return path to ground and electromagnetic coupling with surrounding environment. Inductor performance parameters are accurately predicted up to self-resonance frequency.