• DocumentCode
    3845
  • Title

    Fabrication and Characterization of Edge-Conformed Graphene-Silicon Waveguides

  • Author

    Horvath, Cameron ; Bachman, Daniel ; Guangcan Mi ; Vien Van

  • Author_Institution
    Appl. Nanotools Inc., Edmonton, AB, Canada
  • Volume
    27
  • Issue
    6
  • fYear
    2015
  • fDate
    March15, 15 2015
  • Firstpage
    585
  • Lastpage
    587
  • Abstract
    We report a simple and robust method for fabricating graphene-on-silicon waveguides on a silicon-on-insulator (SOI) chip. The waveguide consists of a silicon core covered by a graphene layer whose width exactly conforms with the width of the silicon core and whose length can be precisely controlled. Raman spectroscopy showed that the graphene layer retained its high quality after processing. Transmission measurements of fabricated graphene-on-silicon waveguides showed polarizationdependent propagation losses of 0.03 dB/μm for the transverseelectric (TE) mode and 0.07 dB/μm for the transverse-magnetic (TM) mode, in excellent agreement with theoretical simulations.
  • Keywords
    Raman spectra; elemental semiconductors; graphene; light polarisation; light transmission; optical fabrication; optical losses; optical testing; optical variables measurement; optical waveguides; silicon; silicon-on-insulator; C-Si; Raman spectroscopy; edge-conformed graphene-silicon waveguide characterization; edge-conformed graphene-silicon waveguide fabrication; polarization-dependent propagation losses; silicon-on-insulator chip; transmission measurements; transverse-electric mode; transverse-magnetic mode; Absorption; Graphene; Optical device fabrication; Optical polarization; Optical waveguides; Propagation losses; Silicon; Graphene photonics; graphene photonics; graphene-on-silicon waveguides;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2014.2385757
  • Filename
    7001619