DocumentCode :
3845794
Title :
The Electrothermal Large-Signal Model of Power MOS Transistors for SPICE
Author :
Janusz Zarebski;Krzysztof G?recki
Author_Institution :
Department of Marine Electronics , Gdynia Maritime University, Gdynia, Poland
Volume :
25
Issue :
5
fYear :
2010
Firstpage :
1265
Lastpage :
1274
Abstract :
In this paper, the isothermal model of power MOS transistors offered by the producer of these devices and the electrothermal model of these devices proposed by the authors are presented. The results of experimental verification of both the models are given as well.
Keywords :
"Electrothermal effects","MOSFETs","SPICE","Isothermal processes","Electronic circuits","Circuit analysis","Computational modeling","Circuit simulation","Circuit analysis computing","Computer simulation"
Journal_Title :
IEEE Transactions on Power Electronics
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/TPEL.2009.2036850
Filename :
5340688
Link To Document :
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