• DocumentCode
    3846679
  • Title

    Thermionic field emission in p-barrier enhanced InP/InGaAs/InP HEMTs

  • Author

    K. Schimpf;M. Horstmann;H. Hardtdegen;M. Marso;P. Kordos

  • Author_Institution
    Res. Centre, Inst. of Thin Film & Ion Technol., Julich, Germany
  • Volume
    32
  • Issue
    23
  • fYear
    1996
  • Firstpage
    2132
  • Lastpage
    2134
  • Abstract
    A model for thermionic field emission in p-barrier enhanced InP HEMTs is presented indicating that a reduction in the gate leakage of those devices is related to an increase in effective barrier thickness. Good agreement between this model and our experimental data is obtained.
  • Keywords
    "Thermionic emission","Electron emission","Indium compounds","Gallium compounds","MODFETs","Leakage currents","Semiconductor device modeling"
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19961439
  • Filename
    543880
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3846679