Title :
Thermionic field emission in p-barrier enhanced InP/InGaAs/InP HEMTs
Author :
K. Schimpf;M. Horstmann;H. Hardtdegen;M. Marso;P. Kordos
Author_Institution :
Res. Centre, Inst. of Thin Film & Ion Technol., Julich, Germany
Abstract :
A model for thermionic field emission in p-barrier enhanced InP HEMTs is presented indicating that a reduction in the gate leakage of those devices is related to an increase in effective barrier thickness. Good agreement between this model and our experimental data is obtained.
Keywords :
"Thermionic emission","Electron emission","Indium compounds","Gallium compounds","MODFETs","Leakage currents","Semiconductor device modeling"
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961439
