Use of charge pumping for characterising interface traps during thermal annealing of irradiated power VDMOSFETs

A recently proposed charge pumping technique for characterising the Si/SiO/sub 2/ interface in power MOSFETs is applied to investigating the interface-trap behaviour during the thermal annealing of /spl gamma/-ray irradiated power VDMOSFETs. A comparison with results obtained by the midgap technique shows good qualitative agreement between the two techniques. Quantitative differences observed are discussed in detail, as well as the advantages and limitations of charge pumping application in power MOSFETs.