• DocumentCode
    3847622
  • Title

    High-Performance MIM Capacitors Using Novel PMNT Thin Films

  • Author

    Wenbin Chen;Kevin G. McCarthy;Alan Mathewson;Mehmet Copuroglu;Shane O´Brien;Richard Winfield

  • Author_Institution
    Tyndall National Institute, University College Cork, Cork, Ireland
  • Volume
    31
  • Issue
    9
  • fYear
    2010
  • Firstpage
    996
  • Lastpage
    998
  • Abstract
    High-performance metal-insulator-metal (MIM) capacitors using novel Pb(Mg0.33Nb0.67)0.65Ti0.35O3 (PMNT) thin films were fabricated and investigated. The dielectric properties of the PMNT capacitors were characterized at both dc and radio frequencies. A significant high-κ of 1115 (high capacitance density of 26 fF/μm2) for a PMNT MIM capacitor has been achieved. In addition, small leakage current density of 2 × 10-10 A/cm2 and low loss tangent of 0.0188 are also obtained. The results indicate that high-κ PMNT is a promising candidate material for high-performance MIM capacitors.
  • Keywords
    "MIM capacitors","Transistors","Dielectric thin films","Dielectric materials","Dielectric losses","Niobium","Radio frequency","Capacitance","High-K gate dielectrics","Ferroelectric materials"
  • Journal_Title
    IEEE Electron Device Letters
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2052585
  • Filename
    5523882
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3847622