CMOS triode transconductor based on quasi-floating-gate transistors

A novel CMOS transconductor based on transistors operating in the triode region and quasi-floating gate (QFG) techniques is proposed. The V-I conversion is performed by two triode transistors acting as a current divider and QFG transistors are employed to enforce a constant drain-source voltage, improving the linearity notably. The circuit has been fabricated and measured using a 0.5 m CMOS technology in order to validate the QFG design.