Title :
A Power Efficient Frequency Divider for 60 GHz Band
Author :
Dušan Grujic;Milan Savic;Jelena Popovic-Bozovic
Author_Institution :
TES Electronic Solutions, Belgrade, Serbia
Abstract :
Four stage injection locked ring oscillator frequency divider by 16 is presented in this letter. Test chip was fabricated in IHP 0.25 μm SiGe:C HBT BiCMOS technology (200/200 GHz fT /fMAX ). Test chip area is 0.24 mm2 with core size of only 116 × 80 μm2. Total power consumption is 23.8 mW from 3 V supply for all cores. The divider operates in a frequency range of 34 to >; 67 GHz with the input power level of -10 dBm. Very good first stage FOM value of 6.7 GHz/mW is reported.
Keywords :
"Frequency conversion","Frequency measurement","BiCMOS integrated circuits","Phase noise","Semiconductor device measurement","Heterojunction bipolar transistors"
Journal_Title :
IEEE Microwave and Wireless Components Letters
DOI :
10.1109/LMWC.2010.2103357
