• DocumentCode
    3850219
  • Title

    Thermal Impacts on the Performance of Nanoscale-Gap Thermophotovoltaic Power Generators

  • Author

    Mathieu Francoeur;Rodolphe Vaillon;M. Pinar Mengüç

  • Author_Institution
    University of Kentucky. He is now with the Department of Mechanical Engineering, University of Utah, Salt Lake City , USA
  • Volume
    26
  • Issue
    2
  • fYear
    2011
  • Firstpage
    686
  • Lastpage
    698
  • Abstract
    The thermal impacts on the performance of nanoscale-gap thermophotovoltaic (nano-TPV) power generators are investigated using a coupled near-field thermal radiation, charge, and heat transport formulation. A nano-TPV device consisting of a tungsten radiator, maintained at 2000 K, and cells made of indium gallium antimonide (In0.18Ga0.82Sb) are considered; the thermal management system is modeled assuming a convective boundary with a fluid temperature fixed at 293 K. Results reveal that nano-TPV performance characteristics are closely related to the temperature of the cell. When the radiator and the junction are separated by a 20 nm vacuum gap, the power output and the conversion efficiency of the system are respectively 5.83 × 105 Wm-2 and 24.8% at 300 K, whereas these values drop to 8.09 × 104 Wm-2 and 3.2% at 500 K. In order to maintain the cell at room temperature, a heat transfer coefficient as high as 105 Wm-2 K-1 is required for nanometer-size vacuum gaps. The reason for this is that thermal radiation since thermal radiation enhancement beyond the blackbody from a bulk radiator of tungsten is broadband in nature, while only a certain part of the spectrum is useful for maximizing nano-TPV performance. In future studies, near-field radiation spectral conditions leading to optimal performance characteristics of the device will be investigated.
  • Keywords
    "Heating","Nanoscale devices","Photonic band gap","Absorption","Mathematical model","Radiative recombination","Temperature"
  • Journal_Title
    IEEE Transactions on Energy Conversion
  • Publisher
    ieee
  • ISSN
    0885-8969
  • Type

    jour

  • DOI
    10.1109/TEC.2011.2118212
  • Filename
    5744109