Title :
Improved flash cell performance by N/sub 2/O annealing of interpoly oxide
Author :
Fuh-Cheng Jong; Tiao-Yuan Huang; Tien-Sheng Chao; Horng-Chih Lin; Len-Yi Leu;K. Young; Chen-Hsi Lin;K.Y. Chiu
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this letter, we report the effects of N/sub 2/O annealing of interpoly oxide on flash cell performance. It is demonstrated that by adding an N/sub 2/O anneal after interpoly oxide formation, improved cycling endurance is achieved. The program and erase efficiencies are also improved significantly, compared to the control cell without N/sub 2/O anneal. The cells with N/sub 2/O anneal show higher cell current (i.e., drain current), which can be ascribed to a lower threshold voltage and higher transconductance, compared to the control cell.
Keywords :
"Annealing","Silicon","Tunneling","Chaos","EPROM","Laboratories","Threshold voltage","Transconductance","Voltage control","Charge carrier processes"
Journal_Title :
IEEE Electron Device Letters
