7.4W yellow GaInNAs-based semiconductor disk laser

A high power frequency-doubled semiconductor disk laser emitting 7.4 W of output power at the yellow wavelength range is reported. Fundamental emission at around 1190 nm was achieved using a high quality gain mirror incorporating GaInNAs quantum wells. The infrared radiation was frequency doubled using an intracavity beta barium borate crystal. To the best of the authors knowledge, this is the highest output power reported for a single-chip semiconductor disk laser emitting yellow radiation.